A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.     

铁电存储场效应晶体管I-V特性的物理机制模拟

文章讨论的模型主要描述了铁电存储场效应晶体管（FEMFET）的I-V特性。从理论结果可反映出几何尺寸效应和材料参数对晶体管电特性的影响。传统的阈值电压的概念巳不再适用，由于铁电层反偏偶极子的开关作用，自发极化的增加对存储器的工作状态产生很小的影响。该模型可用于设计和工艺参数的优化，并由直观原型的方法得到了验证。     

NiTi形状记忆薄膜的显微结构和力学性能

NiTi形状记忆合金薄膜具有形状记忆效应，极有希望用于制造高技术领域微电子机械系统中的微型激发器。NiTi形状记忆合金薄膜在制备和使用过程中需要高品质（衬）底材。本文利用高分辨电子显微学和高分辨分析电子显微学详细研究了硅底材NiTi形状记忆合金薄膜的NiTi／Si和NiTi／SiO2微结构体系，包括薄膜精细结构和界面反应。也研究了其显微结构和力学性能的关系。特别给出了NiTi形状记忆合金薄膜产生疲劳过程的微观过程的起因，通过高达十万个使用热循环前后样品显微结构变化的比较，发现纳米尺度上的TiNi3新相的形成导致疲劳过程的发生。如何抑制TiNi3新相形成的研究正在进行之中，这将为进一步提高NiTi形状记忆合金的使用寿命指出方向。     

气液固三相相平衡热力学模型与计算方法

原油中含有大量的高分子有机固相物质，因此，要准确地描述油气体系相平衡，必须对气液固三相相平衡进行研究，在对高分子有机烃类沥青沉降机理有了一定的认识的基础上，提出了大的交互作用系数，可以描述沥青与原油中轻质不相容性的程度。根据对油气烃类混合物体系的一般性认识与提出的沥青组分特征化方法，导出了与之相应的有其自身特殊性的气液沥青三相相平衡物料平衡方程组，用考虑沥青沉降三相闪蒸数值算法，对沥青沉降进行有效的理化模拟计算，此外，结合实例分析，给出了沥青质参考逸度的计算，饱和压力和沉降量的拟合方法。     

Cooperation between memory systems: Acetylcholine release in the amygdala correlates positively with performance on a hippocampus-dependent task.

The present experiment examined the relationship between release of acetylcholine (ACh) in the amygdala and performance on a hippocampus-dependent spatial working memory task. Using in vivo microdialysis, the authors measured ACh release in rats during testing on a spontaneous alternation task. Amygdala ACh release was positively correlated with performance on the hippocampus-dependent task. These findings suggest that activation of the amygdala promotes processing in other neural systems important for learning and memory. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

TMS320C67系列EMIF与异步FIFO存储器的接口设计

介绍了TI公司TMS320C67系列DSP的EMIF(外部存储器接口)与异步FIFO(先进先出)存储器的硬件接口设计,着重描述了用EDMA(扩展的直接存储器访问)方式读取FIFO存储器数据的软件设计流程,最后说明了在选择FIFO存储器时应注意的问题.由于EMIF的强大功能,不仅具有很高的数据吞吐率,而且可以与不同类型的同步、异步器件进行无缝连接,使硬件接口电路简单,调试方便.运用EDMA的方式进行数据传输,由EDMA控制器完成DSP存储空间内的数据搬移,这样可以最大限度地节省CPU的资源,提高整个系统的运算速度.     

SHS of shape memory CuZnAl alloys

Aiming at preparation of shape memory alloys (SMAs), we explored the SHS of Cu_{1 − x} Zn_{1 − y} Al_{1 − z} alloys (0.29 < x < 0.30, 0.74 < y < 0.75, and 0.83 < z < 0.96). The most pronounced shape memory effect was exhibited by the alloys of the following compositions (wt %): (1) Cu(70.6)Zn(25.4)Al(4.0), (2) Cu(70.1)Zn(25.9)Al(4.0), and (3) Cu(69.9)Zn(26.1)Al(4.0). The effect of process parameters on the synthesis of CuZnAl alloys was studied by XRD, optical microscopy, and scanning electron microscopy (SEM). The grain size of CuZnAl was found to depend on the relative amount of the primary CuZn and AlZn phases. Changes in the transformation temperature and heat of transformation are discussed in terms of ignition intensity and compaction. Mechanism of the process depends on the level of the temperature attained relative to the melting point of components. At the melting point of AlZn, the process is controlled by the solid-state diffusion of AlZn into a product layer. The ignition temperature for this system depends on the temperature of the austenite-martensite transformation in CuZnAl alloys. The composition and structure of the products was found to markedly depend on process parameters. The SHS technique has been successfully used to prepare a variety of SMAs.      

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 10⁴. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.     

Maltreated children's memory: Accuracy, suggestibility, and psychopathology.

Memory, suggestibility, stress arousal, and trauma-related psychopathology were examined in 328 3- to 16-year-olds involved in forensic investigations of abuse and neglect. Children's memory and suggestibility were assessed for a medical examination and venipuncture. Being older and scoring higher in cognitive functioning were related to fewer inaccuracies. In addition, cortisol level and trauma symptoms in children who reported more dissociative tendencies were associated with increased memory error, whereas cortisol level and trauma symptoms were not associated with increased error for children who reported fewer dissociative tendencies. Sexual and/or physical abuse predicted greater accuracy. The study contributes important new information to scientific understanding of maltreatment, psychopathology, and eyewitness memory in children. (PsycINFO Database Record (c) 2010 APA, all rights reserved)